Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Cruces, S., Ganeriwala, M.D., Lee, J., Völkel, L., Braun, D., Grundmann, A., Ran, K., González Marín, E., Kalisch, H., Heuken, M., Vescan, A., Mayer, J., Godoy, A., Daus, A. and Lemme, M.C.
Small Sci. 2400523 (2025) .
https://doi.org/10.1002/smsc.202400523
We’re excited to share a recent work by Sofia Cruces and co-workers, published in Small Science, which reports on forming-free, volatile resistive switching in multilayer MoS₂ grown by metal-organic chemical vapor deposition (MOCVD).
This study demonstrates highly reproducible and fast-switching RS behavior (as low as 130 ns) at low operating voltages (~2V) —a promising result for scalable neuromorphic and memory devices.
Using a comprehensive approach combining transmission electron microscopy, electronic transport modeling, and DFT simulations, Cruces and co-workers unveil the mechanism behind the switching behavior and develop a compact, physics-based model for device simulation. They also showcase the integration of these memristors as artificial neurons—paving the way for next-gen neuromorphic hardware.
This work is the result of a great collaboration between:
🔹 Prof. Max Lemme’s group @ RWTH Aachen University
🔹 The group of Andres Godoy @ Universidad de Granada
🔹 The Graphene Electronics team @ AMO GmbH
🔹 The group of Prof. Andrei Vescan @ RWTH Aachen University
🔹 the Ernst Ruska Center at FZ Jülich
🔹 and AIXTRON SE
The full article can be downloaded open-access here: https://onlinelibrary.wiley.com/doi/10.1002/smsc.202400523