Publications in peer-reviewed journals
2026
Water-based, large-scale transfer of 2D materials grown on sapphire substrates
Nico Rademacher, Lukas Völkel, Eros Reato, Martin Otto, Simonas Krotkus, Jan Mischke, Emre Yengel, Christof Mauder, Alex Henning, Michael Heuken, Ke Ran, Joachim Mayer, Max C. Lemme
npj 2D Mater Appl 10, 48 (2026).
https://doi.org/10.1038/s41699-026-00696-z
Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Advanced Electronic Materials 12, no. 7 (2026): e00800.
https://doi.org/10.1002/aelm.202500800
Integration of Low-Voltage Nanoscale MoS${_2}$ Memristors on CMOS Microchips
Lee, Jimin; Cruces, Sofia; Liu, Xiaohuan; Yang, Chen; Maroufidis, Vasilis; Jo, JangHyun; Völkel, Lukas; Braun, Dennis; Möller, Michael; Brackmann, Leon; Kalisch, Holger; Heuken, Dr Michael; Vescan, Andrei; Dunin-Borkowski, Rafal; Mayer, Joachim; Wiefels, Stefan; Lemme, Max C.
Advanced Functional Materials (2026): e27644.
https://doi.org/10.1002/adfm.202527644
2025
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme
Advanced Functional Materials (2025): e26682.
https://doi.org/10.1002/adfm.202526682
Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Vasileios Maroufidis Andreadis, Joachim Mayer, Stephan Menzel, Alwin Daus & Max C. Lemme
npj 2D Mater Appl 9, 86 (2025).
https://doi.org/10.1038/s41699-025-00614-9
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces; Mohit D. Ganeriwala; Jimin Lee; Ke Ran; Janghyun Jo; Lukas Völkel; Dennis Braun; Bárbara Canto; Enrique G. Marín; Holger Kalisch; Michael Heuken; Andrei Vescan; Rafal E. Dunin-Borkowski; Joachim Mayer; Andrés Godoy; Alwin Daus; Max C. Lemme
Nano Lett. 2025, 25, 33, 12455–12462
https://doi.org/10.1021/acs.nanolett.5c01992
Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy
Ke Ran; Janghyun Jo; Sofía Cruces; Zhenxing Wang; Rafal E. Dunin-Borkowski; Joachim Mayer; Max C. Lemme
Nat Commun 16, 7433 (2025).
https://doi.org/10.1038/s41467-025-62592-2
Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors
Völkel, Lukas; Ahmad, Rana Walied; Bestaeva, Alana; Braun, Dennis; Cruces, Sofia; Lee, Jimin; Pasko, Sergej; Krotkus, Simonas; Heuken, Michael; Menzel, Stephan; Lemme, Max C.
npj 2D Mater Appl 9, 41 (2025).
https://doi.org/10.1038/s41699-025-00566-0
Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches
Mohit D. Ganeriwala; Daniel Luque-Jarava; Francisco Pasadas; Juan J. Palacios; Francisco G. Ruiz; Andres Godoy; Enrique G. Marin
Nanoscale, 2025,17, 13797-13807
https://doi.org/10.1039/D4NR05321D
Reconfigurable Organic Electrochemical Transistors with High Dynamic Ranges for Fully Integrated Physical Reservoir Computing
Chungbi Han, Mingyu Kim, Seong Jun Park, Jung Sun Eo, Donghyeok Kim, Young Ran Park, Sungjune Jung, Gunuk Wang
Adv. Funct. Mater. 2025, 2423814.
https://doi.org/10.1002/adfm.202423814
2024
Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α‑Phase Formamidinium Lead Triiodide
Donghyeok Kim, Young Ran Park, Chanhyeok Kim, Seungguan Lee, Hanul Min, Gunuk Wang
ACS Appl. Electron. Mater. 2024, 6, 9, 6561–6568
https://doi.org/10.1021/acsaelm.4c01022
NexusCIM: High-Throughput Multi-CIM Array Architecture with C-Mesh NoC and Hub Cores
Hyunmin Kim; Sungju Ryu
2024 IEEE 42nd International Conference on Computer Design (ICCD), Milan, Italy, 2024, pp. 401-408
https://10.1109/ICCD63220.2024.00068
Switching polariton screening in MoS2 microcavity toward polaritonics
Ashok Mondal, Chandan Biswas, Pramod Ghising, Byoung Hee Moon, Ki Kang Kim and Young Hee Lee
Sci. Adv.11,eadr7202(2025).
https://doi.org/10.1126/sciadv.adr7202
Van der Waals Multilayered Films: Wafer-Scale Synthesis and Applications in Electronics and Optoelectronics
Seok Joon Yun, Hayoung Ko, Sunny Park, Byung Hoon Lee, Nahun Kim, Hai Phuong Duong, Yeojin Lee, Soo Min Kim, Ki Kang Kim
Adv. Funct. Mater. 2024, 34, 2409458 – Review
https://doi.org/10.1002/adfm.202409458
Ultraflat hexagonal boron nitride for high-κ dielectric integration
Hayoung Ko, Seungjin Lee & Ki Kang Kim
Nat. Mater. 23, 1461-1462 (2024) – News & Views
https://doi.org/10.1038/s41563-024-02013-9
A robust and highly active bimetallic phosphide/oxide heterostructure electrocatalyst for efficient industrial-scale hydrogen production
Balakrishnan Kirubasankar, Jisu Kwon, Sohyeon Hong, Yo Seob Won, Soo Ho Choi, Jeeho Lee, Jae Woo Kim, Ki Kang Kim, Soo Min Kim
Nano Energy 128, 109805 (2024)
https://doi.org/10.1016/j.nanoen.2024.109805
Atomic sawtooth-like metal films for vdW-layered single-crystal growth
Hayoung Ko, Soo Ho Choi, Yunjae Park, Seungjin Lee, Chang Seok Oh, Sung Youb Kim, Young Hee Lee, Soo Min Kim, Feng Ding & Ki Kang Kim
Nat Commun 15, 5848 (2024) – Open Access
https://doi.org/10.1038/s41467-024-50184-5
Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors
Mohit D. Ganeriwala, Alejandro Toral-López, Estela Calaforra-Ayuso, Francisco Pasadas, Francisco G. Ruiz, Enrique G. Marin, Andres Godoy
ACS Applied Nano Materials 7 (21), 24857-24865 (2024) – Open Access
https://doi.org/10.1021/acsanm.4c04769
Conference Proceedings
2025
Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers
Jimin Lee, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Alwin Daus, and Max C. Lemme
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong Kong, Hong Kong, 2025, pp. 1-3, https://doi.org/10.1109/EDTM61175.2025.11041161
2D Materials for Neuromorphic Computing Devices
Max C. Lemme, Lukas Völkel, Sofia Cruces, Jimin Lee, Yuan Fa
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong Kong, Hong Kong, 2025, pp. 1-3, https://doi.org/10.1109/EDTM61175.2025.11041583
Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
Yuan Fa, Dennis Braun, Lukas Völkel, Holger Lerch, Holger Kalisch, Michael Heuken, Andrei Vescan, Zhenxing Wang, Max C Lemme
2025 Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, 2025, pp. 80-81, https://doi.org/10.23919/SNW65111.2025.11097209.
Preprints
2025
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors
Braun, Dennis; Liu, Jing; Maroufidis, Vasilis A.; Fiadziushkin, Hleb; Völkel, Lukas; Lee, Jimin; Cruces, Sofia; Grundmann, Annika; Ran, Ke; Wahlbrink, Thorsten; Kalisch, Holger; Vescan, Andrei; Mayer, Joachim; Heuken, Dr Michael; Daus, Alwin; Lemme, Max Christian
https://zenodo.org/records/17775815